PART |
Description |
Maker |
IRLML6302TRPBF IRLML6302PBF07 |
HEXFET? Power MOSFET technology, Ultra Low On-Resistance, P-Channel MOSFET generation v technology
|
International Rectifier
|
KRF7401 |
Generation V Technology Ultra Low On-Resistance N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
IRF7506PBF IRF7506 IRF7506TRPBF IRF7406PBF IRF7506 |
Generation V Technology HEXFET Power MOSFET (VDSS=-30V , RDS(on)=O.27ohm) ULTRA LOW ON RESISTANCE
|
IRF[International Rectifier]
|
IRF7509PBF IRF7509TRPBF |
Ultra Low On-Resistance HEXFET?Power MOSFET HEXFET㈢Power MOSFET Generation V Technology
|
International Rectifier
|
KRF7343 |
HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET
|
TY Semicondutor TY Semiconductor Co., Ltd
|
IRF7303 |
Generation V Technology
|
Kersemi Electronic Co., Ltd...
|
IRL3103D1PBF |
Generation 5 Technology
|
International Rectifier
|
IRF7403_04 IRF7403PBF IRF740304 IRF7403PBF-15 |
GENERATION V TECHNOLOGY HEXFET Power MOSFET
|
IRF[International Rectifier]
|
IDT8T49N008I |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
SGW15N120 SGP15N120 SGP15N12009 SGW15N120FKSA1 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG Infineon Technologies A...
|
IRF7304TR |
Generation V Technology -20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
SGP20N60 SGP20N6009 SGW20N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|